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2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor
These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.
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* Excellent DC Current Gain - * *
hFE = 30-250 @ IC = 100 mAdc Current-Gain - Bandwidth Product - fT = 10 MHz (Min) @ IC = 50 mAdc Pb-Free Packages are Available*
0.5 AMPERE POWER TRANSISTORS NPN SILICON 250-350 VOLTS, 20 WATTS
II II I IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIII IIIIII I II I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II I II II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I III II IIIIIIIIIIIIIIIIIII I III II I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII
MAXIMUM RATINGS (Note 1)
Rating Symbol VCEO VCB VEB IC IB 2N5655 250 275 2N5657 350 375 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Base Current 6.0 0.5 1.0 1.0 Continuous Peak Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 20 0.16 W W/C C/W TJ, Tstg - 65 to + 150
TO-225AA CASE 77-09 STYLE 1
MARKING DIAGRAM
YWW 2 N565xG
THERMAL CHARACTERISTICS
Characteristic
Symbol qJC
Max
Unit
Thermal Resistance, Junction-to-Case
6.25
C/W
Y WW 2N565x G
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data.
= Year = Work Week = Device Code x = 5 or 7 = Pb-Free Package
ORDERING INFORMATION
Device 2N5655 2N5655G 2N5657 2N5657G Package TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) Shipping 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
1
October, 2006 - Rev. 9
Publication Order Number: 2N5655/D
2N5655, 2N5657
PD, POWER DISSIPATION (WATTS)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I II II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) 2N5655 2N5657 2N5655 2N5657 2N5655 2N5657 VCEO(sus) V(BR)CEO ICEO 250 350 250 350 - - - - - - - - - - - - - Vdc Vdc mAdc 0.1 0.1 0.1 0.1 1.0 1.0 10 10 10 Collector Cutoff Current (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) Collector Cutoff Current (VCB = 275 Vdc, IE = 0) (VCB = 375 Vdc, IE = 0) ICEX mAdc 2N5655 2N5657 2N5655 2N5657 2N5655 2N5657 ICBO mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) DC Current Gain (Note 3) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 250 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) IEBO hFE mAdc - ON CHARACTERISTICS 25 30 15 5.0 - - - - - 250 - - 1.0 2.5 10 1.0 Collector-Emitter Saturation Voltage (Note 3) (IC = 100 mAdc, IB = 10 mAdc) (IC = 250 mAdc, IB = 25 mAdc) (IC = 500 mAdc, IB = 100 mAdc) VCE(sat) Vdc Base-Emitter Voltage (IC = 100 mAdc, VCE = 10 Vdc) (Note 3) VBE fT Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) 10 - - MHz pF - Cob hfe 25 - Small-Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Indicates JEDEC registered data for 2N5655 Series. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT is defined as the frequency at which |hfe| extrapolates to unity. 20 2. 3. 4. 40 30
50 mH
20
Hg RELAY +
X 200 TO SCOPE 6.0 V Y + 50 V -
10
300
1.0
0
25
50
75 100 TC, CASE TEMPERATURE (C)
125
150
Figure 1. Power Derating
Figure 2. Sustaining Voltage Test Circuit
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
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2
2N5655, 2N5657
1.0 10 ms IC, COLLECTOR CURRENT (AMP) 0.5 TJ = 150C 0.2 0.1 500 ms
0.05 0.02
1.0 ms dc Second Breakdown Limit Thermal Limit @ TC = 25C Bonding Wire Limit Curves apply below rated VCEO 2N5655 2N5657 20 30 40 60 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 600
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
0.01
Figure 3. Active-Region Safe Operating Area
300 200 hFE , DC CURRENT GAIN TJ = +150C +100C + 25C VCE = 10 V VCE = 2.0 V
100 70 50 30 20
-55 C
10 1.0
2.0
3.0
5.0
7.0
10
20 30 50 IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
Figure 4. Current Gain
1.0
0.8 V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V
0.6
0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5.0 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = + 25C
Figure 5. "On" Voltages
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3
2N5655, 2N5657
300 200 Cib C, CAPACITANCE (pF) 100 70 50 30 20 Cob TJ = + 25C
10 0.1
0.2
0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 6. Capacitance
10 5.0 2.0 1.0 t, TIME ( s) 0.5 0.2 0.1 0.05 0.02 0.01 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 500 td tr IC/IB = 10 VCC = 300 V, VBE(off) = 2.0 V (2N5657, only) VCC = 100 V, VBE(off) = 0 V
Figure 7. Turn-On Time
10 5.0 IC/IB = 10
t, TIME ( s)
2.0 1.0 0.5 VCC = 300 V (Type 2N5657, only) 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 tf
ts
VCC = 100 V
0.2 0.1 1.0
500
Figure 8. Turn-Off Time
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4
2N5655, 2N5657
PACKAGE DIMENSIONS
TO-225 CASE 77-09 ISSUE Z
-B- U Q
F M
C
-A-
123
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
DIM A B C D F G H J K M Q R S U V
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
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5
2N5655/D

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